发明授权
US5982698A Multi-bank system semiconductor memory device capable of operating at
high speed
失效
能够高速运转的多存储体系半导体存储器件
- 专利标题： Multi-bank system semiconductor memory device capable of operating at high speed
- 专利标题（中）： 能够高速运转的多存储体系半导体存储器件
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申请号： US215927申请日： 1998-12-18
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公开(公告)号： US5982698A公开(公告)日： 1999-11-09
- 发明人: Masaki Tsukude
- 申请人： Masaki Tsukude
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX10-198864 19980714
- 主分类号： G11C11/401
- IPC分类号： G11C11/401 ; G11C7/06 ; G11C8/00 ; G11C8/12 ; G11C11/407 ; G11C11/409
摘要：
A semiconductor integrated circuit device of the present invention includes a plurality of banks and a plurality of sense amplifier bands. A switch circuit included in each sense amplifier band receives a signal on a transmission line and outputs a signal read from the bank to a global data input/output line arranged in the column direction. A column bank control circuit for outputting a column bank control signal is arranged on the column decoder side. The column bank control signal is supplied to the transmission line through a column bank control signal line arranged in the column direction. The switch circuit operates in accordance with the column bank control signal. By such a configuration, a column-related operation can be matched easily.
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