- 专利标题： Semiconductor device and method of fabricating the same
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申请号： US821656申请日： 1997-03-20
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公开(公告)号： US5985741A公开(公告)日： 1999-11-16
- 发明人: Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
- 申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang
- 申请人地址： JPX
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX5-48534 19930215
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/04 ; H01L29/786
摘要：
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
公开/授权文献
- US4103744A Safety valve and ball type equalizing valve 公开/授权日：1978-08-01
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