发明授权
US5985755A Processing for polishing dissimilar conductive layers in a semiconductor
device
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用于在半导体器件中抛光不同导电层的处理
- 专利标题： Processing for polishing dissimilar conductive layers in a semiconductor device
- 专利标题（中）： 用于在半导体器件中抛光不同导电层的处理
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申请号： US822025申请日： 1997-03-24
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公开(公告)号： US5985755A公开(公告)日： 1999-11-16
- 发明人: Rajeev Bajaj , Janos Farkas , Sung C. Kim , Jaime Saravia
- 申请人： Rajeev Bajaj , Janos Farkas , Sung C. Kim , Jaime Saravia
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; H01L21/321 ; H01L21/4763
摘要：
A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different source containers (111 and 112), wherein the first slurry is dispensed until the tungsten is removed and then the slurry dispense is switched to the second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.
公开/授权文献
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