- 专利标题: Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
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申请号: US57152申请日: 1998-04-07
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公开(公告)号: US5985771A公开(公告)日: 1999-11-16
- 发明人: John T. Moore , Scott J. DeBoer , Mark Fischer
- 申请人: John T. Moore , Scott J. DeBoer , Mark Fischer
- 申请人地址: ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: ID Boise
- 主分类号: H01L21/318
- IPC分类号: H01L21/318 ; H01L21/32 ; H01L21/762
摘要:
In one aspect, the invention includes a method of semiconductive wafer processing comprising forming a silicon nitride layer over a surface of a semiconductive wafer, the silicon nitride layer comprising at least two portions, one of said at least two portions generating a compressive force against the other of the at least two portions, and the other of the at least two portions generating a tensile force against the one of the at least two portions. In another aspect, the invention includes a method of reducing stress on semiconductive wafer, the semiconductive wafer having a pair of opposing surfaces and having more silicon nitride over one of the opposing surfaces than over the other of the opposing surfaces, the method comprising providing the silicon nitride over the one of the opposing surfaces to comprise a first portion, a second portion and a third portion, the first, second and third portions being elevationally displaced relative to one another, the second portion being between the first and third portions, the second portion having a greater stoichiometric amount of silicon than the first and third portions, the semiconductive wafer being subjected to less stress than if the silicon nitride over the one of the opposing surfaces had a constant stoichiometric amount of silicon throughout its thickness. In yet other aspects, the invention includes semiconductive wafer assemblies.
公开/授权文献
- USD382759S Drinking straw 公开/授权日:1997-08-26