发明授权
- 专利标题: Pattern forming method utilizing first insulative and then conductive overlayer and underlayer
- 专利标题(中): 使用第一绝缘导电覆层和底层的图案形成方法
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申请号: US213373申请日: 1998-12-17
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公开(公告)号: US5994007A公开(公告)日: 1999-11-30
- 发明人: Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
- 申请人: Yasuhiko Sato , Atsushi Ando , Yasunobu Onishi , Yoshihiko Nakano , Shuji Hayase , Rikako Kani
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX9-350883 19971219
- 主分类号: G03F7/09
- IPC分类号: G03F7/09 ; G03F7/20 ; G03F9/00
摘要:
Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.
公开/授权文献
- US5367921A Flywheel assembly 公开/授权日:1994-11-29
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