Method for forming pattern
    1.
    发明申请
    Method for forming pattern 失效
    形成图案的方法

    公开(公告)号:US20050233255A1

    公开(公告)日:2005-10-20

    申请号:US11138216

    申请日:2005-05-27

    摘要: A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

    摘要翻译: 一种形成图案的方法,其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元,使掩模材料层多孔,在掩模材料层的表面上形成抗蚀剂层,图案化抗蚀剂膜以形成抗蚀剂图案,干蚀刻掩模材料层,从而将抗蚀剂图案 到掩蔽材料层,从而形成掩模材料图案,并干燥蚀刻加工膜,从而将掩模材料图案转印到工作膜上,从而形成工作膜图案。

    Alkali soluble phenol polymer photosensitive composition
    4.
    发明授权
    Alkali soluble phenol polymer photosensitive composition 失效
    ALKALI可溶性酚醛聚合物感光性组合物

    公开(公告)号:US5091282A

    公开(公告)日:1992-02-25

    申请号:US504300

    申请日:1990-04-03

    IPC分类号: G03F7/004 G03F7/038 G03F7/075

    摘要: This invention includes a photosensitive composition containing an alkali-soluble resin and a compound represented by formula (I), (II) or (III) described in the claims and the specification, a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (IV) described in the claims and the specification and a basic compound, and a photosensitive composition containing an alkali-soluble polymer, a compound represented by formula (VI) described in the claims and the specification and a compound which produces an acid upon radiation of light. A pattern formation method using these photosensitive compositions includes the steps of dissolving any one of the above photosensitive compositions in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, and developing the exposed resin layer with an aqueous alkaline solution. When the first or second photosensitive composition is used, a good pattern can also be formed by a method including the steps of dissolving either the first or second photosensitive composition in an organic solvent to prepare a photosensitive resin solution, coating the photosensitive resin solution on a substrate to form a photosensitive resin layer on the substrate, pattern-exposing the photosensitive resin layer, heating the pattern-exposed resin layer, exposing the entire surface of the heated resin layer, and developing the entirely exposed resin layer with an aqueous alkaline solution.

    Polysilanes, Polysiloxanes and silicone resist materials containing
these compounds
    6.
    发明授权
    Polysilanes, Polysiloxanes and silicone resist materials containing these compounds 失效
    聚硅烷,聚硅氧烷和含有这些化合物的硅氧烷抗蚀材料

    公开(公告)号:US4822716A

    公开(公告)日:1989-04-18

    申请号:US938874

    申请日:1986-12-08

    摘要: The polysilanes and polysiloxanes of the present invention are polymers that contain silicon in the principal chain, and contain in the side chains alkaline soluble groups such as phenol-based hydroxy group and carboxyl group.One silicone resist material of the present invention comprises the polysilane or the polysiloxane in the above.Another silicone resist material of the present invention contains the above polysilane or polysiloxane, and an appropriate photosensitive agent.Still another silicone resist material of the present invention does not contain the above photosensitive agent, and in its stead, it contains a group that possesses photosensitive to ultraviolet rays or the like, via a siloxane bonding in the principal chain. As a substance with such photosensitivity, one may mention, for example, o-nitrobenzylsilyl groups that presents alkaline solubility when it is irradiated by ultraviolet rays.Accordingly, the silicone resist materials of the present invention, especially the second and third silicone resist materials, are alkaline developable, and also possess a superior resistance to oxygen plasma. Therefore, they can be used as a top layer film in the two-layered resist system, making it possible to form very fine resist patterns, fast and with a minimum number of processing steps.

    摘要翻译: 本发明的聚硅烷和聚硅氧烷是在主链中含有硅并且在侧链中含有碱性可溶性基团如苯酚基羟基和羧基的聚合物。 本发明的一种硅氧烷抗蚀剂材料包含上述聚硅烷或聚硅氧烷。 本发明的另一种硅氧烷抗蚀剂材料含有上述聚硅烷或聚硅氧烷和适当的感光剂。 本发明的另一种硅氧烷抗蚀剂材料不含上述光敏剂,代替其中含有通过主链中的硅氧烷键具有紫外线等感光性的基团。 作为具有这种光敏性的物质,可以提及例如当用紫外线照射时呈现碱溶性的邻硝基苄基甲硅烷基。 因此,本发明的有机硅抗蚀剂材料,特别是第二和第三有机硅抗蚀剂材料是碱显影的,并且还具有优异的耐氧等离子体性。 因此,它们可以用作双层抗蚀剂系统中的顶层膜,使得可以形成非常精细的抗蚀剂图案,并且具有最少数量的加工步骤。

    Pattern forming method and method of manufacturing semiconductor device
    8.
    发明授权
    Pattern forming method and method of manufacturing semiconductor device 失效
    图案形成方法和制造半导体器件的方法

    公开(公告)号:US07794922B2

    公开(公告)日:2010-09-14

    申请号:US11431823

    申请日:2006-05-11

    IPC分类号: G03F7/26

    摘要: A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.

    摘要翻译: 图案形成方法包括在被处理膜上形成光致抗蚀剂膜,通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜,选择性地进行部分浸渍曝光 通过浸渍液将该光致抗蚀剂膜,浸渍液体供给到光致抗蚀剂膜上,在形成保护膜之后,在进行浸渍曝光前,选择性地除去包含浸渍液的残留物质的残留物质, 通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域,去除保护膜,以及形成包括光致抗蚀剂膜的图案。

    Method for forming pattern
    9.
    发明授权
    Method for forming pattern 失效
    形成图案的方法

    公开(公告)号:US07198886B2

    公开(公告)日:2007-04-03

    申请号:US11138216

    申请日:2005-05-27

    IPC分类号: G03F7/30

    摘要: A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

    摘要翻译: 一种形成图案的方法,其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元,使掩模材料层多孔,在掩模材料层的表面上形成抗蚀剂层,图案化抗蚀剂膜以形成抗蚀剂图案,干蚀刻掩模材料层,从而将抗蚀剂图案 到掩蔽材料层,从而形成掩模材料图案,并干燥蚀刻加工膜,从而将掩模材料图案转印到工作膜上,从而形成工作膜图案。

    Method for forming a pattern and method of manufacturing semiconductor device
    10.
    发明申请
    Method for forming a pattern and method of manufacturing semiconductor device 审中-公开
    用于形成图案的方法和制造半导体器件的方法

    公开(公告)号:US20050153245A1

    公开(公告)日:2005-07-14

    申请号:US10940757

    申请日:2004-09-15

    摘要: Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.

    摘要翻译: 公开了一种形成图案的方法,包括在工作膜的表面上在其主链中涂覆含有具有硅 - 氮键的化合物的溶液以形成掩模,用氧代替掩模中的氮,形成抗蚀剂 在掩模的表面上形成抗蚀剂图案,通过使抗蚀剂膜进行图案化曝光和显影处理,将抗蚀剂图案转印到掩模以形成掩模图案,并将掩模图案转印到工作膜上,形成抗蚀剂图案 形成工作电影模式。