发明授权
- 专利标题： Method of fabricating flash memory cell
- 专利标题（中）： 制造闪存单元的方法
-
申请号： US24163申请日： 1998-02-17
-
公开(公告)号： US5994185A公开(公告)日： 1999-11-30
- 发明人: Yau-Kae Sheu , Gary Hong
- 申请人： Yau-Kae Sheu , Gary Hong
- 申请人地址： TWX Hsinchu
- 专利权人： United Semiconductor Corp.
- 当前专利权人： United Semiconductor Corp.
- 当前专利权人地址： TWX Hsinchu
- 优先权： TWX87101623 19980207
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/788
摘要：
A method of fabricating a flash memory. A heavily doped region with the opposite polarity of the drain region is formed between the channel region and the drain region. The heavily doped region is in a bar shape extending towards both the drain and the source regions along a side of the floating gate. Furthermore, the reading operation is performed in reverse by applying a zero voltage to the drain region, and a non-zero voltage to the source region.
公开/授权文献
- USD368627S Portable food tray with cup holder 公开/授权日：1996-04-09
信息查询
IPC分类:
