发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US934611申请日： 1997-09-22
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公开(公告)号： US5998854A公开(公告)日： 1999-12-07
- 发明人: Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
- 申请人： Masakazu Morishita , Shigetoshi Sugawa , Toru Koizumi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-270972 19920915; JPX5-73586 19930331
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8249 ; H01L27/06 ; H01L27/07 ; H01L29/10 ; H01L29/73 ; H01L29/739 ; H01L29/78 ; H01L29/786 ; H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11
摘要：
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.
公开/授权文献
- US5402667A Monitoring of soil 公开/授权日：1995-04-04
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