发明授权
US6001687A Process for forming self-aligned source in flash cell using SiN spacer
as hard mask
有权
使用SiN间隔物作为硬掩模在闪存单元中形成自对准源的工艺
- 专利标题： Process for forming self-aligned source in flash cell using SiN spacer as hard mask
- 专利标题（中）： 使用SiN间隔物作为硬掩模在闪存单元中形成自对准源的工艺
-
申请号： US283849申请日： 1999-04-01
-
公开(公告)号： US6001687A公开(公告)日： 1999-12-14
- 发明人: Wen-Ting Chu , Di-Son Kuo , Chrong-Jung Lin , Hung-Der Su , Jong Chen
- 申请人： Wen-Ting Chu , Di-Son Kuo , Chrong-Jung Lin , Hung-Der Su , Jong Chen
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/28 ; H01L21/8239
摘要：
When FLASH cells are made in association with STI (as opposed to LOCOS) it is often the case that stringers of silicon nitride are left behind after the spacers have been formed. This problem has been eliminated by requiring that the oxide in the STI trenches remain in place at the time that the silicon nitride spacers are formed. After that, the oxide is removed in the usual manner, following which a SALICIDE process is used to form a self aligned source line. When this sequence is followed no stringers are left behind on the walls of the trench, guaranteeing the absence of any open circuits or high resistance regions in the source line.
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