Process for forming self-aligned source in flash cell using SiN spacer as hard mask

发明授权

US6001687A Process for forming self-aligned source in flash cell using SiN spacer as hard mask 有权

标题翻译：使用SiN间隔物作为硬掩模在闪存单元中形成自对准源的工艺

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专利标题： Process for forming self-aligned source in flash cell using SiN spacer as hard mask
专利标题（中）： 使用SiN间隔物作为硬掩模在闪存单元中形成自对准源的工艺
申请号： US283849

申请日： 1999-04-01
公开(公告)号： US6001687A

公开(公告)日： 1999-12-14
发明人: Wen-Ting Chu , Di-Son Kuo , Chrong-Jung Lin , Hung-Der Su , Jong Chen
申请人： Wen-Ting Chu , Di-Son Kuo , Chrong-Jung Lin , Hung-Der Su , Jong Chen
申请人地址： TWX Hsin-Chu
专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
当前专利权人地址： TWX Hsin-Chu
主分类号： H01L21/8247
IPC分类号： H01L21/8247 ; H01L21/28 ; H01L21/8239

Process for forming self-aligned source in flash cell using SiN spacer
as hard mask

摘要：

When FLASH cells are made in association with STI (as opposed to LOCOS) it is often the case that stringers of silicon nitride are left behind after the spacers have been formed. This problem has been eliminated by requiring that the oxide in the STI trenches remain in place at the time that the silicon nitride spacers are formed. After that, the oxide is removed in the usual manner, following which a SALICIDE process is used to form a self aligned source line. When this sequence is followed no stringers are left behind on the walls of the trench, guaranteeing the absence of any open circuits or high resistance regions in the source line.

摘要（中）：

当与STI（与LOCOS相反）制成FLASH单元时，通常在形成间隔物之后留下氮化硅桁条。通过要求在形成氮化硅间隔物的时刻STI槽中的氧化物保持在适当位置，已经消除了这个问题。之后，以通常的方式去除氧化物，随后使用SALICIDE工艺来形成自对准的源极线。当遵循该顺序时，沟槽的壁上不留下桁条，保证在源极线中不存在任何开路或高电阻区域。

公开/授权文献

US5629525A Plutonium assaying 公开/授权日：1997-05-13

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