发明授权
- 专利标题： Isolation dielectric deposition in multi-polysilicon chemical-mechanical polishing process
- 专利标题（中）： 多晶硅化学机械抛光工艺中的隔离电介质沉积
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申请号： US682457申请日： 1996-07-17
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公开(公告)号： US6001731A公开(公告)日： 1999-12-14
- 发明人: Chung-Hui Su , Mong-Song Liang , Shou-Gwo Wuu , Chen-Jong Wang
- 申请人： Chung-Hui Su , Mong-Song Liang , Shou-Gwo Wuu , Chen-Jong Wang
- 申请人地址： TWX Hsin-Chui
- 专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： TWX Hsin-Chui
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/768 ; H01L21/4763
摘要：
A method for providing a chemical mechanical polishing planarization process for preventing multi-polysilicon and multi-metal level electrical shorts, which includes briefly the sequential processing steps of i) providing an insulating layer to a first thickness over a device wafer with non-planar surface topography; ii) chemical-mechanical polishing the first insulating layer; and iii) deposition of another polysilicon layer of second thickness to prevent the barely exposed or exposed underlying polysilicon from shorting to the next polysilicon or metal level of interconnects.
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