发明授权
- 专利标题： Method of forming a dual damascene with dummy metal lines
- 专利标题（中）： 用虚拟金属线形成双镶嵌的方法
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申请号： US164856申请日： 1998-10-01
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公开(公告)号： US6001733A公开(公告)日： 1999-12-14
- 发明人: Yimin Huang , Ming-Sheng Yang , Tri-Rung Yew
- 申请人： Yimin Huang , Ming-Sheng Yang , Tri-Rung Yew
- 申请人地址： TWX Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsinchu
- 优先权： TWX87110352 19980626
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/321 ; H01L21/768 ; H01L23/52 ; H01L21/44
摘要：
A method for forming dual damascene is provided. First, a first inter-metal dielectric layer and a stop layer is formed on a substrate, and then a first photoresist pattern including a via hole and a dummy metal line is patterned and the stop layer is etched for forming via hole. Next, a second inter-metal dielectric layer is deposited and then a second photoresist pattern is patterned for forming metal line trench by etching. Afterwards, a glue layer and a metal layer are blanketed and the dual damascene structure is formed by chemical mechanical polishing.
公开/授权文献
- US5479122A Sync signal detection apparatus 公开/授权日：1995-12-26
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