- 专利标题： Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
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申请号： US235637申请日： 1999-01-22
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公开(公告)号： US6004393A公开(公告)日： 1999-12-21
- 发明人: Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
- 申请人： Susumu Maeda , Keisei Abe , Kazutaka Terashima , Hideo Nakanishi
- 申请人地址： JPX Hiratsuka JPX Tokyo JPX Kawaguchi JPX Tokyo
- 专利权人： Komatsu Electronic Metals Co., Ltd.,Mitsubishi Materials Silicon Corporation,Kagaku Gijutsu Sinkou Jigyo Dan,Toshiba Ceramics Co., Ltd.
- 当前专利权人： Komatsu Electronic Metals Co., Ltd.,Mitsubishi Materials Silicon Corporation,Kagaku Gijutsu Sinkou Jigyo Dan,Toshiba Ceramics Co., Ltd.
- 当前专利权人地址： JPX Hiratsuka JPX Tokyo JPX Kawaguchi JPX Tokyo
- 优先权： JPX9-118835 19970422
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/20 ; C30B35/00
摘要：
A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.
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