发明授权
US6005436A Internal reduced-voltage generator for semiconductor integrated circuit
失效
用于半导体集成电路的内部降压发生器
- 专利标题: Internal reduced-voltage generator for semiconductor integrated circuit
- 专利标题(中): 用于半导体集成电路的内部降压发生器
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申请号: US857648申请日: 1997-05-16
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公开(公告)号: US6005436A公开(公告)日: 1999-12-21
- 发明人: Akinori Shibayama , Toshio Yamada
- 申请人: Akinori Shibayama , Toshio Yamada
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX4-268490 19921007
- 主分类号: G05F1/46
- IPC分类号: G05F1/46 ; G11C7/00
摘要:
A reference voltage generator is composed of a first constant-voltage generator consisting of three p-type MOS transistors for generating a first reference voltage Vref for use in the normal operation, which is independent of an external power-supply voltage VCC and of a second constant-voltage generator consisting of two p-type MOS transistors and one n-type MOS transistor for generating a second reference voltage Vrefbi for use in a burn-in acceleration test, which is dependent on VCC. The output of each of the constant-voltage generators is feedbacked to the other constant-voltage generator as its input. Two differential amplifiers and two output drivers output, as an internal reduced voltage Vint, the higher one of Vref and Vrefbi which are outputted from the reference voltage generator. Since Vint is generated based on the two outputs Vref and Vrefbi which are outputted from the single reference voltage generator and which are related to each other, the power consumption and layout area of an internal reduced-voltage generator, which is suitable for the burn-in, can be reduced.
公开/授权文献
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