- 专利标题： Reduced leakage DRAM storage unit
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申请号： US915425申请日： 1997-08-20
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公开(公告)号： US6005801A公开(公告)日： 1999-12-21
- 发明人: Zhiqiang (Jeff) Wu , Randhir P S Thakur , Alan Reinberg , Kirk Prall
- 申请人： Zhiqiang (Jeff) Wu , Randhir P S Thakur , Alan Reinberg , Kirk Prall
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： G11C11/404
- IPC分类号： G11C11/404 ; H01L27/108 ; G11C11/40
摘要：
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.
公开/授权文献
- US1540957A Anticreeping device 公开/授权日：1925-06-09
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