Invention Grant
US6008097A MOS transistor of semiconductor device and method of manufacturing the
same
失效
半导体器件的MOS晶体管及其制造方法
- Patent Title: MOS transistor of semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体器件的MOS晶体管及其制造方法
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Application No.: US989033Application Date: 1997-12-11
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Publication No.: US6008097APublication Date: 1999-12-28
- Inventor: Yong Sun Yoon , Kyu Ha Baek , Kee Soo Nam
- Applicant: Yong Sun Yoon , Kyu Ha Baek , Kee Soo Nam
- Applicant Address: KRX Daejon-Shi
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KRX Daejon-Shi
- Priority: KRX96-65746 19961214
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/225 ; H01L21/28 ; H01L21/336 ; H01L21/768 ; H01L29/423
Abstract:
The present invention relates to a MOS transistor of semiconductor device and method of manufacturing the same and, in particular, to MOS a transistor of semiconductor device and method of manufacturing the same which can reduce asymmetry of drain current due to bias of drain current, facilitate shallow junction and reduce the area to a minimum by forming a source/drain.
Public/Granted literature
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