发明授权
- 专利标题： Method for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US958666申请日： 1997-10-28
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公开(公告)号： US6010914A公开(公告)日： 2000-01-04
- 发明人: Seiichi Shishiguchi
- 申请人： Seiichi Shishiguchi
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-284904 19961028
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L21/66 ; H01L23/544 ; G01R31/26
摘要：
A method for manufacturing a semiconductor device comprises the steps of forming consecutively a silicon oxide layer and a test epitaxial layer in a test pattern area on a silicon wafer, forming an epitaxial layer in a product area for semiconductor devices and on the test epitaxial layer simultaneously, measuring a total thickness of the epitaxial layer and the test epitaxial layer formed in the test pattern area by infrared interference, and determining the thickness of the epitaxial layer formed in the product area based on the total thickness to control the thickness of the epitaxial layer in the product area. A thickness control for a very thin epitaxial layer can be obtained.
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