发明授权
- 专利标题： Semiconductor device having an improved lead connection structure and manufacturing method thereof
- 专利标题（中）： 具有改进的引线连接结构的半导体器件及其制造方法
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申请号： US116242申请日： 1998-07-16
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公开(公告)号： US06013951A公开(公告)日： 2000-01-11
- 发明人: Tomohiro Ishida , Shigeru Harada , Takashi Yamashita
- 申请人： Tomohiro Ishida , Shigeru Harada , Takashi Yamashita
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX10-012561 19980126
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.
公开/授权文献
- USD435294S Foot orthosis 公开/授权日：2000-12-19
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