公开(公告)号：US06013951A

公开(公告)日：2000-01-11

申请号：US116242

申请日：1998-07-16

申请人： Tomohiro Ishida ,  Shigeru Harada ,  Takashi Yamashita

发明人： Tomohiro Ishida ,  Shigeru Harada ,  Takashi Yamashita

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53271 ,  H01L23/5226 ,  H01L2924/0002

摘要： A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.

摘要翻译： 形成在硅衬底上的第一多晶硅导线由形成在第一掺杂多晶硅层上的第一掺杂多晶硅层和第一钨硅化物层组成。 在硅衬底上形成的层间绝缘膜具有到达第一掺杂多晶硅层的开口。 形成在层间绝缘膜上的第二多孔化合物引线由连接到开口中的第一多晶硅引线的第二掺杂多晶硅层和形成在第二掺杂多晶硅层上的第二硅化钨层组成。 在开口中，第一和第二掺杂多晶硅层在第一多晶硅导线的侧表面处彼此接触。

公开(公告)号：US5525546A

公开(公告)日：1996-06-11

申请号：US416130

申请日：1995-04-03

申请人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

发明人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041

摘要： A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability. The semiconductor device of this structure is formed by covering the inner surface and its proximity of the pad electrode opening with an elastic insulation film, forming an opening in the elastic insulation film at the bottom of the pad electrode opening, and connecting the pad electrode to an external terminal by wire bonding.

摘要翻译： 半导体器件具有形成在覆盖有保护绝缘膜的半导体衬底上的导电互连层。 在保护绝缘膜中设置焊盘电极开口，使得导电互连层的表面在成为焊盘电极的区域中露出。 导电互连层通过接合线电连接到外部端子。 至少在焊垫电极开口附近的保护绝缘膜的表面和焊盘电极开口的内周侧表面被弹性绝缘膜覆盖。 焊盘电极开口用接合线覆盖。 由于根据这种结构，在焊盘电极开口处没有露出导电互连层，所以防止了侵入焊盘电极开口以侵蚀导电互连层的水分现象，从而提高了可靠性。 该结构的半导体器件通过用弹性绝缘膜覆盖焊盘电极开口的内表面及其接近而形成，在焊盘电极开口的底部的弹性绝缘膜上形成开口，并将焊盘电极连接到 外部端子通过引线接合。

公开(公告)号：US5430329A

公开(公告)日：1995-07-04

申请号：US249679

申请日：1994-05-26

申请人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

发明人： Shigeru Harada ,  Takemi Endoh ,  Tomohiro Ishida

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/29 ,  H01L29/41

CPC分类号： H01L24/05 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041

摘要： A semiconductor device has a conductive interconnection layer formed on a semiconductor substrate covered with a protection insulation film. A pad electrode opening is provided in the protection insulation film so that the surface of the conductive interconnection layer is exposed in the region which becomes the pad electrode. The conductive interconnection layer is electrically connected to an external terminal by a bonding wire. At least the surface of the protection insulation film in the proximity of the pad electrode opening and the inner peripheral side face of the pad electrode opening are covered with an elastic insulation film. The pad electrode opening is covered with the bonding wire. Since the conductive interconnection layer is not exposed at the pad electrode opening according to this structure, the phenomenon of moisture intruding into the pad electrode opening to corrode the conductive interconnection layer is prevented to improve reliability. The semiconductor device of this structure is formed by covering the inner surface and its proximity of the pad electrode opening with an elastic insulation film, forming an opening in the elastic insulation film at the bottom of the pad electrode opening, and connecting the pad electrode to an external terminal by wire bonding.

摘要翻译： 半导体器件具有形成在覆盖有保护绝缘膜的半导体衬底上的导电互连层。 在保护绝缘膜中设置焊盘电极开口，使得导电互连层的表面在成为焊盘电极的区域中露出。 导电互连层通过接合线电连接到外部端子。 至少在焊垫电极开口附近的保护绝缘膜的表面和焊盘电极开口的内周侧表面被弹性绝缘膜覆盖。 焊盘电极开口用接合线覆盖。 由于根据这种结构，在焊盘电极开口处没有露出导电互连层，所以防止了侵入焊盘电极开口以侵蚀导电互连层的水分现象，从而提高了可靠性。 该结构的半导体器件通过用弹性绝缘膜覆盖焊盘电极开口的内表面及其接近而形成，在焊盘电极开口的底部的弹性绝缘膜上形成开口，并将焊盘电极连接到 外部端子通过引线接合。

公开(公告)号：US20100213227A1

公开(公告)日：2010-08-26

申请号：US12656325

申请日：2010-01-26

申请人： Yasuhiro Kodama ,  Hiroshi Zushi ,  Makoto Okada ,  Tomohiro Ishida

发明人： Yasuhiro Kodama ,  Hiroshi Zushi ,  Makoto Okada ,  Tomohiro Ishida

IPC分类号： B60R7/00

CPC分类号： B60N3/108

摘要： A cup holder includes a holder body, a supporter, an urger, and an inhibitor. The holder body has an accommodation space into which a container is inserted. The supporter is disposed rotatably to the holder body. The urger urges the supporter to rotate upward. The inhibitor is made of an elastic body, and inhibits the supporter from rotating upward and then retains the supporter at a standard position. The inhibitor has a retaining portion. The retaining portion of the inhibitor not only retains the supporter at the standard position by inhibiting the supporter from rotating upward by means of coming into contact with the supporter, but also enables the supporter to rotate more upward beyond the standard position when the supporter exerts a pressing force to the inhibitor to make the inhibitor undergo elastic deformation.

摘要翻译： 杯架包括保持器本体，支撑件，尿布和抑制剂。 保持器主体具有容纳插入其中的容纳空间。 支撑件可旋转地设置在保持器主体上。 乌尔格敦促支持者向上旋转。 抑制剂由弹性体制成，并且阻止支撑物向上旋转，然后将支撑物保持在标准位置。 抑制剂具有保持部分。 抑制剂的保持部不仅通过与支撑体接触而通过抑制支撑体向上旋转而将支撑体保持在标准位置，而且还可使支撑体在支撑体发挥作用时向上旋转超过标准位置 抑制剂的压力使抑制剂发生弹性变形。

公开(公告)号：US5420070A

公开(公告)日：1995-05-30

申请号：US192910

申请日：1994-02-07

申请人： Megumi Matsuura ,  Tomohiro Ishida

发明人： Megumi Matsuura ,  Tomohiro Ishida

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L2924/0002

摘要： In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.

摘要翻译： 在多层铝互连结构中，通过促进在铝互连层之间的界面处的混合并改善连接孔上的上铝互连层的覆盖度来实现提高的可靠性以及稳定的通孔电阻。 第一铝互连层通过连接孔与第二铝互连层电连接。 第二铝互连层设置有钛膜，氮化钛膜和铝合金膜。 连接孔填充有钨膜。 在第一铝互连层的表面上形成钨膜。 该钛膜通过连接孔与钨膜接触。

公开(公告)号：US20070119855A1

公开(公告)日：2007-05-31

申请号：US11600773

申请日：2006-11-17

申请人： Tomohiro Ishida ,  Makoto Okada ,  Katsuhiro Katagiri

发明人： Tomohiro Ishida ,  Makoto Okada ,  Katsuhiro Katagiri

IPC分类号： A47K1/08 ,  B65D25/00

CPC分类号： B60N3/106

摘要： A cup holder includes a holder body, an inner-peripheral-side supporting member, a first urging member, an outer-peripheral-side supporting member, and a second urging member. The holder body has an accommodation portion. The first urging member urges the inner-peripheral-side supporting member rotatably upward to a first datum position. The second urging member urges the outer-peripheral-side supporting member rotatably upward to a second datum position. The first rotary shaft-center of the inner-peripheral-side supporting member, which is located at the first datum position, being disposed at a position, which is displaced by a predetermined magnitude toward an imaginary center of the accommodation portion of the holder body with respect to the second rotary shaft-center of the outer-peripheral-side supporting member, which is located at the second datum position.

摘要翻译： 杯架包括保持器主体，内周侧支撑构件，第一施力构件，外周侧支撑构件和第二施力构件。 保持体具有容纳部。 第一推动构件将内周侧支撑构件可旋转地向上推动到第一基准位置。 第二推动构件将外周侧支撑构件可旋转地向上推动到第二基准位置。 位于第一基准位置的内周侧支撑构件的第一旋转轴心设置在朝向保持体的收容部的假想中心位移一定位置的位置 相对于位于第二基准位置的外周侧支撑构件的第二旋转轴中心。

公开(公告)号：US20110236791A1

公开(公告)日：2011-09-29

申请号：US13131626

申请日：2009-11-10

申请人： Nami Endoh ,  Sozaburo Ohashi ,  Tetsuo Nagami ,  Toshiharu Tabata ,  Tomohiro Ishida ,  Mikihiro Kataoka

发明人： Nami Endoh ,  Sozaburo Ohashi ,  Tetsuo Nagami ,  Toshiharu Tabata ,  Tomohiro Ishida ,  Mikihiro Kataoka

IPC分类号： H01M8/10

CPC分类号： H01M4/92 ,  H01M4/926 ,  H01M2008/1095

摘要： An object of the present invention is to optimize an anode catalyst layer such that high output performance can be achieved even under low-humidity conditions. In addition, another object of the present invention is to provide a polymer electrolyte fuel cell having such an anode catalyst layer.The following is obtained: an anode catalyst layer for a polymer electrolyte fuel cell, which comprises a carbon support on which a catalyst is carried and a hydrogen ion-conductive polyelectrolyte, and wherein the catalyst is carried by a carbon support for which the hydrophilic characteristic value specified based on a value representing the amount of adsorbed water vapor/the amount of adsorbed nitrogen is 0.02 or less, or the hydrophilic characteristic value for the catalyst-carrying carbon support is 0.30 or less.

摘要翻译： 本发明的目的是优化阳极催化剂层，使得即使在低湿度条件下也能实现高输出性能。 此外，本发明的另一个目的是提供一种具有这种阳极催化剂层的聚合物电解质燃料电池。 获得以下：用于固体高分子型燃料电池的阳极催化剂层，其包含载持催化剂的碳载体和氢离子传导型聚电解质，其中，所述催化剂由碳载体承载，所述碳载体具有亲水性 基于表示吸附水蒸气量/吸附氮量的值的值为0.02以下，催化剂载体碳载体的亲水性特性值为0.30以下。

公开(公告)号：US07520405B2

公开(公告)日：2009-04-21

申请号：US11600773

申请日：2006-11-17

申请人： Tomohiro Ishida ,  Makoto Okada ,  Katsuhiro Katagiri

发明人： Tomohiro Ishida ,  Makoto Okada ,  Katsuhiro Katagiri

IPC分类号： B65D25/00

CPC分类号： B60N3/106

摘要： A cup holder includes a holder body, an inner-peripheral-side supporting member, a first urging member, an outer-peripheral-side supporting member, and a second urging member. The holder body has an accommodation portion. The first urging member urges the inner-peripheral-side supporting member rotatably upward to a first datum position. The second urging member urges the outer-peripheral-side supporting member rotatably upward to a second datum position. The first rotary shaft-center of the inner-peripheral-side supporting member, which is located at the first datum position, being disposed at a position, which is displaced by a predetermined magnitude toward an imaginary center of the accommodation portion of the holder body with respect to the second rotary shaft-center of the outer-peripheral-side supporting member, which is located at the second datum position.

摘要翻译： 杯架包括保持器主体，内周侧支撑构件，第一施力构件，外周侧支撑构件和第二施力构件。 保持体具有容纳部。 第一推动构件将内周侧支撑构件可旋转地向上推动到第一基准位置。 第二推动构件将外周侧支撑构件可旋转地向上推动到第二基准位置。 位于第一基准位置的内周侧支撑构件的第一旋转轴心设置在朝向保持体的收容部的假想中心位移一定位置的位置 相对于位于第二基准位置的外周侧支撑构件的第二旋转轴中心。

公开(公告)号：US5306952A

公开(公告)日：1994-04-26

申请号：US959904

申请日：1992-10-13

申请人： Megumi Matsuura ,  Tomohiro Ishida

发明人： Megumi Matsuura ,  Tomohiro Ishida

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62 ,  H01L29/64

CPC分类号： H01L23/53223 ,  H01L23/5226 ,  H01L2924/0002

摘要： In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum-containing interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first interconnection layer is electrically connected to a second interconnection layer through a connection hole. The second interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.

摘要翻译： 在多层铝互连结构中，通过促进在含铝互连层之间的界面处的混合并提高连接孔上的上铝互连层的覆盖度来实现提高的可靠性以及稳定的通孔电阻。 第一互连层通过连接孔与第二互连层电连接。 第二互连层设置有钛膜，氮化钛膜和铝合金膜。 连接孔填充有钨膜。 在第一互连层的表面上形成钨膜。 钛膜通过连接孔与钨膜接触。