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US6016271A Method and circuit for generating a gate voltage in non-volatile memory devices 有权
用于在非易失性存储器件中产生栅极电压的方法和电路

Method and circuit for generating a gate voltage in non-volatile memory
devices
Abstract:
A circuit generates a regulated voltage, in particular for gate terminals of non-volatile memory cells of the floating gate type. The circuit includes a generator circuit adapted to generate an unregulated voltage on its output. A comparator circuit is coupled to the output of the generator circuit including a reference element including a non-volatile memory cell of the floating gate type and adapted to output an error signal tied to the difference between the unregulated voltage and the threshold voltage of the cell. A regulator circuit is coupled to the output of the comparator circuit and is operative to regulate the unregulated voltage based on the value of the error signal. The regulated voltage is made programmable and tied to the parameters of the memory cell.
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