发明授权
- 专利标题： Etch rate loading improvement
- 专利标题（中）： 蚀刻速率加载改进
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申请号： US624301申请日： 1996-03-29
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公开(公告)号： US6017825A公开(公告)日： 2000-01-25
- 发明人: Sung Ho Kim , David R-Chen Liu
- 申请人： Sung Ho Kim , David R-Chen Liu
- 申请人地址： CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： CA Fremont
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/00 ; H01L21/3213
摘要：
A method in a plasma processing system having a top electrode and a bottom electrode for etching through a portion of a selected layer of a layer stack of a wafer. The method includes the step of etching at least partially through the selected layer while providing a first radio frequency (RF) signal having a first RF frequency to the top electrode. The method further includes the step of providing a second RF signal having a second RF frequency lower than the first RF frequency to the bottom electrode.
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