发明授权
US6020238A Method of fabricating a high dielectric constant interpolysilicon
dielectric structure for a low voltage non-volatile memory
失效
制造用于低电压非易失性存储器的高介电常数多晶硅介电结构的方法
- 专利标题： Method of fabricating a high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory
- 专利标题（中）： 制造用于低电压非易失性存储器的高介电常数多晶硅介电结构的方法
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申请号： US978107申请日： 1997-11-25
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公开(公告)号： US6020238A公开(公告)日： 2000-02-01
- 发明人: Yue-Song He , Effiong Ibok
- 申请人： Yue-Song He , Effiong Ibok
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8247
摘要：
A method of fabricating an interpolysilicon dielectric structure in a non-volatile memory includes the steps of forming a nitride layer 12 on a floating gate 10 and a high dielectric constant layer 14 on the nitride layer 12. A control gate 18 may be formed directly on the high dielectric constant layer 14, or on a thin layer 16 of an oxide or an oxynitride on the high dielectric constant layer 14.
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