A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer vertically. The pressure within the process chamber is set at 1 Torr or above. The temperature of the surface to be processed of the wafer is set at 600.degree. C. to 800.degree. C. Under these conditions, a polysilicon film is formed in the recess by a vapor phase growth method. During the formation of the film, the wafer is rotated at 500 rpm or above by an output of a motor via a holder. Thereby, a high film formation rate and a good step coverage can be made compatible.