发明授权
- 专利标题： Resistor and its manufacturing method
- 专利标题（中）： 电阻及其制造方法
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申请号： US226549申请日： 1999-01-07
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公开(公告)号： US06023217A公开(公告)日： 2000-02-08
- 发明人: Hiroyuki Yamada , Masato Hashimoto , Seiji Tsuda
- 申请人： Hiroyuki Yamada , Masato Hashimoto , Seiji Tsuda
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX10-002001 19980108; JPX10-002002 19980108
- 主分类号： H01C1/142
- IPC分类号： H01C1/142 ; H01C17/00 ; H01C17/28 ; H05K3/34 ; H01C1/012
摘要：
A resistor comprising a substrate, a pair of first top electrode layers disposed at least on the top face of the substrate, a resistance layer disposed so as to electrically connect with the first top electrode layers, a protective layer disposed so as to cover at least the resistance layer, and a pair of second top electrode layers disposed at least on the top faces of the pair of first top electrode layers. At least one of the pairs of first top electrode layers or second top electrode layers partially extends to the substrate side faces.
公开/授权文献
- US4910407A Radiation image storage panel 公开/授权日：1990-03-20
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