发明授权
- 专利标题： Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
- 专利标题（中）： 制造半导体，半导体器件和半导体衬底的方法
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申请号： US94616申请日： 1998-06-15
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公开(公告)号： US6030849A公开(公告)日： 2000-02-29
- 发明人: Yoshiaki Hasegawa , Akihiko Ishibashi , Nobuyuki Uemura , Yuzaburo Ban , Masahiro Kume , Yoshihiro Hara , Isao Kidoguchi , Ayumu Tsujimura
- 申请人： Yoshiaki Hasegawa , Akihiko Ishibashi , Nobuyuki Uemura , Yuzaburo Ban , Masahiro Kume , Yoshihiro Hara , Isao Kidoguchi , Ayumu Tsujimura
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co. Ltd.
- 当前专利权人： Matsushita Electric Industrial Co. Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX9-158365 19970616
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205
摘要：
On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.
公开/授权文献
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