发明授权
- 专利标题： Elevated substrate formation and local interconnect integrated fabrication
- 专利标题（中）： 升高的基板形成和局部互连集成制造
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申请号： US993332申请日： 1997-12-19
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公开(公告)号： US6030860A公开(公告)日： 2000-02-29
- 发明人: Mark I. Gardner , Daniel Kadosh , Michael P. Duane
- 申请人： Mark I. Gardner , Daniel Kadosh , Michael P. Duane
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/822 ; H01L27/06 ; H01L21/00 ; H01L21/8236
摘要：
A wafer includes levels elevated above the wafer substrate or base substrate which includes separated substrates suitable for circuit device element formation. In one embodiment, a first level dielectric is formed over circuit devices having elements formed in the wafer substrate. Contacts from the circuit elements may extend to the surface of the first level dielectric. A second dielectric is formed on the first level dielectric and etched to create separated openings with some openings exposing contacts. The openings are filled with substrate material, thus forming elevated substrates and local interconnects where exposed contact top surfaces are present. The substrate material is suitable for circuit device fabrication. Additional levels of elevated substrates and concurrently formed local interconnects may be subsequently fabricated.