发明授权
- 专利标题: Gallium arsenide voltage-controlled oscillator and oscillator delay cell
- 专利标题(中): 砷化镓压控振荡器和振荡器延时单元
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申请号: US231101申请日: 1999-01-14
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公开(公告)号: US6034570A公开(公告)日: 2000-03-07
- 发明人: Greg Warwar
- 申请人: Greg Warwar
- 申请人地址: CA Camarillo
- 专利权人: Vitesse Semiconductor Corporation
- 当前专利权人: Vitesse Semiconductor Corporation
- 当前专利权人地址: CA Camarillo
- 主分类号: H03K3/0231
- IPC分类号: H03K3/0231 ; H03L7/099 ; H03L7/183 ; H03B5/24
摘要:
A single-gate SCFL delay cell is disclosed for implementation in a common ring oscillator VCO. The delay cell has a differential input stage the output current from which is fixed by two resistors. The differential input stage drives a source follower output stage providing an output capable of driving the differential input of the next stage of the oscillator. The current sources typically used in the source follower output stage have been replaced by voltage-to-current converters. The voltage-to-current converters are comprised of two MESFET devices the gates of which are coupled to a differential control voltage. The source of each of the two devices is coupled to a current source the value of the two current sources being equal. The resistor couples the two sources together such that the voltage drop across the resistor governs how much current is conducted by each of the two devices. The drain of one of the devices is coupled to the supply while the drain of the other device is coupled to the source of the source follower output stage. Thus, the output current of the source follower will be dictated by the difference between the voltage drop across the resistor.
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