发明授权
- 专利标题： Preparation method of semiconductor device
- 专利标题（中）： 半导体器件的制备方法
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申请号： US114222申请日： 1998-07-13
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公开(公告)号： US6037197A公开(公告)日： 2000-03-14
- 发明人: Shunpei Yamazaki , Yoshiharu Hirakata
- 申请人： Shunpei Yamazaki , Yoshiharu Hirakata
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX9-205344 19970714
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; G02F1/1335 ; G02F1/135 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L21/00
摘要：
A preparation method of a semiconductor device comprising a substrate having formed thereon plural semiconductor elements formed in a matrix form and plural pixel electrodes each connected to each semiconductor element and a liquid crystal layer held on the substrate, comprisinga step of forming the plural pixel electrodes on an interlayer dielectric,a step of heat-treating the plural electrodes to form hillocks and whiskers on the surfaces of the electrodes, anda step of removing the hillocks and the whiskers to flatten the electrode surfaces.The semiconductor device is suitably used for, for example, a reflection type LCD apparatus with pixel electrodes having a good light reflectance and a high anti-brittleness.
公开/授权文献
- USRE32876E Disc cassette (disc cartridge) 公开/授权日：1989-02-21
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