发明授权
- 专利标题： Etchant gas and a method for etching transistor gates
- 专利标题（中）： 蚀刻气体和蚀刻晶体管栅极的方法
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申请号： US22772申请日： 1998-02-12
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公开(公告)号： US6037265A公开(公告)日： 2000-03-14
- 发明人: David Mui , Ajay Kumar , Jeffrey Chinn
- 申请人： David Mui , Ajay Kumar , Jeffrey Chinn
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C09K13/00
- IPC分类号： C09K13/00 ; H01L21/3065
摘要：
A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).
公开/授权文献
- USD365174S Dry shaver 公开/授权日：1995-12-12
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