发明授权
US6040231A Method of fabricating a shallow trench isolation structure which
includes using a salicide process to form an aslope periphery at the
top corner of the substrate
失效
制造浅沟槽隔离结构的方法，其包括使用自对准硅化物工艺在衬底的顶角处形成斜边周边
- 专利标题： Method of fabricating a shallow trench isolation structure which includes using a salicide process to form an aslope periphery at the top corner of the substrate
- 专利标题（中）： 制造浅沟槽隔离结构的方法，其包括使用自对准硅化物工艺在衬底的顶角处形成斜边周边
-
申请号： US055684申请日： 1998-04-06
-
公开(公告)号： US6040231A公开(公告)日： 2000-03-21
- 发明人: Der-Yuan Wu
- 申请人： Der-Yuan Wu
- 申请人地址： TWX Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsin-Chu
- 优先权： TWX87100940 19980123
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/762 ; H01L21/76 ; H01L21/311
摘要：
A method of forming a shallow trench isolation structure is disclosed. The method comprises providing a substrate; forming a first oxide layer, a stop layer and a second oxide layer successively on the substrate; patterning the second oxide layer, the stop layer and the first oxide layer and a portion of the substrate to form a trench wherein the trench has a top corner. Then, a recess is formed at the periphery of the pad oxide layer, using the salicide process to form an aslope periphery at the top corner. Consequently, kink effect is improved, leakage current is reduced and the performance of the device is enhanced.
公开/授权文献
- USD388510S Air treatment unit with removable feet therefor 公开/授权日：1997-12-30