Invention Grant
US6043141A Method for in situ growth of p-type doped group II-VI semiconductor films
失效
p型掺杂II-VI族半导体膜的原位生长方法
- Patent Title: Method for in situ growth of p-type doped group II-VI semiconductor films
- Patent Title (中): p型掺杂II-VI族半导体膜的原位生长方法
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Application No.: US965391Application Date: 1997-11-06
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Publication No.: US6043141APublication Date: 2000-03-28
- Inventor: Owen K. Wu , Rajesh D. Rajavel
- Applicant: Owen K. Wu , Rajesh D. Rajavel
- Applicant Address: CA El Segundo
- Assignee: Hughes Electronics Corporation
- Current Assignee: Hughes Electronics Corporation
- Current Assignee Address: CA El Segundo
- Main IPC: C30B23/02
- IPC: C30B23/02 ; H01L21/363 ; H01L21/20
Abstract:
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further includes the steps of generating an elemental Group V flux by evaporating an elemental Group V material and providing the elemental Group V flux to a Group VI sublattice of the lattice.
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