公开(公告)号：US5976958A

公开(公告)日：1999-11-02

申请号：US965390

申请日：1997-11-06

Applicant: Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

Inventor： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

IPC: C30B23/02 ,  H01L21/363 ,  H01L21/20

CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02631

Abstract: A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.

Abstract translation: 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，并通过蒸发固体V族源材料产生第一V族熔剂。 然后第一组V磁通被分解以产生第二组V磁通，其又提供给p型掺杂生长膜的晶格。 V族源材料可以通过砷使得第二V族通量主要包括从四聚砷分解的二聚砷，以改善砷掺入到晶格的第VI族亚晶格中。

公开(公告)号：US5936268A

公开(公告)日：1999-08-10

申请号：US174745

申请日：1988-03-29

Applicant: Charles A. Cockrum ,  Peter R. Bratt ,  David R. Rhiger ,  Owen K. Wu

Inventor： Charles A. Cockrum ,  Peter R. Bratt ,  David R. Rhiger ,  Owen K. Wu

IPC: H01L27/146 ,  H01L31/0328 ,  H01L31/00

CPC classification number: H01L27/14649 ,  H01L27/14623

Abstract: An array 1 of photodiodes 2 is comprised of a Group II-VI material, such as HgCdTe, which may be selectively doped to form a plurality of diode junctions. Array 1 is comprised of a plurality of photodiodes 2 which are disposed in a regular, two dimensional array. Incident IR radiation, which may be long wavelength, medium wavelength or short wavelength (LWIR, MWIR or SWIR) radiation, is incident upon a surface of the array 1. The array 1 comprises a radiation absorbing base layer 3 of Hg.sub.1-x Cd.sub.x Te semiconducting material, the value of x determining the responsivity of the array to either LWIR, MWIR or SWIR. Each of the photodiodes 2 is defined by a mesa structure, or cap layer 3; or the array 1 of photodiodes 2 may be a planar structure. Each of the photodiodes 2 is provided with an area of contact metallization 4 upon a top surface thereof, the metallization serving to electrically couple an underlying photodiode to a readout device. The upper surface of the array 1 is provided with, in accordance with the invention, a passivation layer 5 comprised of an epitaxial layer of Group II-VI material which forms a heterostructure with the underlying Group II-VI material and which has a wider bandgap than the underlying Hg(.sub.1-x)Cd.sub.x Te, thereby beneficially repelling both holes and electrons from the diode junctions.

Abstract translation: 光电二极管2的阵列1由诸如HgCdTe的II-VI族材料组成，其可以被选择性地掺杂以形成多个二极管结。 阵列1由以规则的二维阵列布置的多个光电二极管2组成。 可能是长波长，中波长或短波长（LWIR，MWIR或SWIR）辐射的入射IR辐射入射到阵列1的表面。阵列1包括Hg1-xCdxTe半导体材料的辐射吸收基底层3 ，x的值确定阵列对LWIR，MWIR或SWIR的响应度。 每个光电二极管2由台面结构或盖层3限定; 或者光电二极管2的阵列1可以是平面结构。 每个光电二极管2在其顶表面上设置有接触金属化区域4，金属化用于将下面的光电二极管电耦合到读出装置。 根据本发明，阵列1的上表面设置有由II-VI族材料的外延层组成的钝化层5，其与下面的II-VI族材料形成异质结构，并且具有更宽的带隙 比底层的Hg（1-x）CdxTe，从而有益地排斥二极管结的空穴和电子。

公开(公告)号：US6043141A

公开(公告)日：2000-03-28

申请号：US965391

申请日：1997-11-06

Applicant: Owen K. Wu ,  Rajesh D. Rajavel

Inventor： Owen K. Wu ,  Rajesh D. Rajavel

IPC: C30B23/02 ,  H01L21/363 ,  H01L21/20

CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02551 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S438/971

Abstract: A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further includes the steps of generating an elemental Group V flux by evaporating an elemental Group V material and providing the elemental Group V flux to a Group VI sublattice of the lattice.

Abstract translation: 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，其中在晶格表面上建立富阳离子条件。 该方法还包括以下步骤：通过蒸发元素V族材料并将元素V族通量提供给晶格的VI族子晶格来产生元素V族通量。

公开(公告)号：US5048457A

公开(公告)日：1991-09-17

申请号：US531711

申请日：1990-05-31

Applicant: Julius Hyman, Jr. ,  John R. Beattie ,  Jesse N. Matossian ,  Owen K. Wu ,  Juan F. Lam ,  Lawrence Anderson

Inventor： Julius Hyman, Jr. ,  John R. Beattie ,  Jesse N. Matossian ,  Owen K. Wu ,  Juan F. Lam ,  Lawrence Anderson

IPC: C30B23/02

CPC classification number: C30B23/02 ,  C30B29/48

Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.

Abstract translation: 公开了一种分子束外延（MBE）生长方法和装置，其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数，并且因此具有更高的效率。 形成高离子化的低压等离子体，其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成，并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长，其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中，其具有无发射混合阴极插入物。 来源优选是难熔金属，例如轧制钽箔，其基本上不发射材料，并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来，而不需要先前的离子推进器所需的特殊提取组件，可获得良好的结果。 Hg粘附系数提高了40倍以上。

公开(公告)号：US5028561A

公开(公告)日：1991-07-02

申请号：US366827

申请日：1989-06-15

Applicant: G. Sanjiv Kamath ,  Owen K. Wu

Inventor： G. Sanjiv Kamath ,  Owen K. Wu

IPC: H01L21/203 ,  C30B23/02 ,  H01L21/363

CPC classification number: C30B23/02 ,  C30B23/002 ,  C30B29/48 ,  H01L21/02551 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  Y10S148/041 ,  Y10S148/064 ,  Y10S148/169 ,  Y10S438/925 ,  Y10S438/971

Abstract: P-type doping of a molecular beam epitaxy (MBE) grown substrate composed of a Group II-VI combination is accomplished by forming a flux from a Group II-V combination, and applying the flux to the substrate at a pressure less than about 10.sup.-6 atmosphere. The Group II material is selected from Zn, Cd, Hg and Mg, the Group V material from As, Sb and P, and the Group VI material from S, Se and Te. The Group II-V dopant combination is preferably provided as a compound formed predominantly from the Group II material, and having the formulation X.sub.3 Y.sub.2, where X is the Group II material and Y is the Group V material. The doping concentration is controlled by controlling the temperature of the Group II-V combination. Metal vacancies in the lattice structure are tied up by the Group II constituent of the dopant combination, leaving the Group V dopant available to enter the Group VI sublattice and produce a p-type doping.

公开(公告)号：US5152866A

公开(公告)日：1992-10-06

申请号：US532144

申请日：1990-05-31

Applicant: Julius Hyman, Jr. ,  John R. Beattie ,  Jesse N. Matossian ,  Owen K. Wu ,  Juan F. Lam ,  Lawrence Anderson

Inventor： Julius Hyman, Jr. ,  John R. Beattie ,  Jesse N. Matossian ,  Owen K. Wu ,  Juan F. Lam ,  Lawrence Anderson

IPC: C30B23/02

CPC classification number: C30B23/02 ,  C30B29/48

Abstract: A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.

Abstract translation: 公开了一种分子束外延（MBE）生长方法和装置，其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数，并且因此具有更高的效率。 形成高离子化的低压等离子体，其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成，并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长，其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中，其具有无发射混合阴极插入物。 来源优选是难熔金属，例如轧制钽箔，其基本上不发射材料，并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来，而不需要先前的离子推进器所需的特殊提取组件，可获得良好的结果。 Hg粘附系数提高了40倍以上。