发明授权
US06046478A P-channel thin film transistor having a gate on the drain region of a
field effect transistor
失效
P沟道薄膜晶体管，其在场效应晶体管的漏极区域具有栅极
- 专利标题： P-channel thin film transistor having a gate on the drain region of a field effect transistor
- 专利标题（中）： P沟道薄膜晶体管，其在场效应晶体管的漏极区域具有栅极
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申请号： US937496申请日： 1997-09-25
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公开(公告)号： US06046478A公开(公告)日： 2000-04-04
- 发明人: Richard K. Klein
- 申请人： Richard K. Klein
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/8244
- IPC分类号： H01L21/8244 ; H01L29/76
摘要：
A device structure and a method of forming the structure comprising a thin film transistor (TFT) in a contact opening of a conventional field effect transistor (FET) by using .alpha.-silicon in the opening and the vertical portion of the .alpha.-silicon functioning as the channel for the TFT and both the FET and TFT sharing a common drain contact.
公开/授权文献
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