发明授权
- 专利标题： Method of fabricating shallow trench isolation
- 专利标题（中）： 浅沟槽隔离的制作方法
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申请号： US140114申请日： 1998-08-25
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公开(公告)号： US6051479A公开(公告)日： 2000-04-18
- 发明人: Gary Hong
- 申请人： Gary Hong
- 申请人地址： TWX Hsinchu
- 专利权人： United Semiconductor Corp.
- 当前专利权人： United Semiconductor Corp.
- 当前专利权人地址： TWX Hsinchu
- 优先权： TWX87108605 19980602
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
A method of forming a shallow trench isolation in a semiconductor substrate. A mask layer is formed to cover an active region of the substrate. A trench is formed within the exposed substrate. The trench is filled with an insulation layer. The dimension of the mask layer is shrunk. A thermal oxidation process is performed to form an oxide protrusion between the trench and the active region. The mask layer is removed.
公开/授权文献
- US5471045A Smart card locking process 公开/授权日：1995-11-28
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