An output circuit of a semiconductor memory device is made up of a level recognition circuit which outputs a feedback signal by comparing an output node and a second reference voltage, and a P-channel MOS transistor and an N-channel MOS transistor which complimentary turn on and off in response to the feedback signal. As a result, when a charge of the output node is not sufficient, the output node is charged by setting a voltage of a power supply node to a power supply voltage Vcc. Then, when the output node is sufficiently charged, the N-channel MOS transistor turns on, and as a result the voltage of the power supply node is set to a first reference voltage. Accordingly, the output circuit of the semiconductor memory device achieve an increased operation speed and decreased voltage level amplitude at the output node.