发明授权
US6052318A Repairable semiconductor memory circuit having parrel redundancy
replacement wherein redundancy elements replace failed elements
有权
具有对等冗余替换的可修复半导体存储器电路，其中冗余元件代替故障元件
- 专利标题： Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements
- 专利标题（中）： 具有对等冗余替换的可修复半导体存储器电路，其中冗余元件代替故障元件
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申请号： US218561申请日： 1998-12-22
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公开(公告)号： US6052318A公开(公告)日： 2000-04-18
- 发明人: Toshiaki Kirihata , Gabriel Daniel
- 申请人： Toshiaki Kirihata , Gabriel Daniel
- 申请人地址： DEX Munich NY Armonk
- 专利权人： Siemens Aktiengesellschaft,International Business Machines, Corp.
- 当前专利权人： Siemens Aktiengesellschaft,International Business Machines, Corp.
- 当前专利权人地址： DEX Munich NY Armonk
- 主分类号： G11C11/401
- IPC分类号： G11C11/401 ; G11C29/00 ; G11C29/04 ; H01L21/82 ; H01L21/8242 ; H01L27/108 ; G11C7/00
摘要：
The present disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. In accordance with the present invention, a high replacement flexibility redundancy and method is employed to increase chip yield and prevent sense amplifier signal contention. Redundancy elements are integrated in at least two of a plurality of memory arrays, which don't share the sense amplifiers. Thus, no additional sense amplifiers are required. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block, which does not share sense amplifiers with the first block. The corresponding row/column is replaced to mimic the redundancy replacement of the first block thereby increasing flexibility and yield as well as preventing sensing signal contention.
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