发明授权
- 专利标题: Sense/output circuit for a semiconductor memory device
- 专利标题(中): 半导体存储器件的检测/输出电路
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申请号: US385737申请日: 1999-08-30
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公开(公告)号: US6058059A公开(公告)日: 2000-05-02
- 发明人: Shih-Huang Huang , Hsin-Pang Lu
- 申请人: Shih-Huang Huang , Hsin-Pang Lu
- 申请人地址: TWX Hsinchu TWX Hsinchu
- 专利权人: United Microelectronics Corp.,United Silicon Incorporated
- 当前专利权人: United Microelectronics Corp.,United Silicon Incorporated
- 当前专利权人地址: TWX Hsinchu TWX Hsinchu
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G11C7/10 ; G11C7/02
摘要:
A sense/output circuit is designed for use with a memory device, such as an SDRAM (Synchronized Dynamic Random-Access Memory) device, which is capable of switching off some power-consuming circuit components immediately after the requested data output is completed. This feature can help reduce the power consumption by the overall memory system, making the use of the SDRAM device more cost-effective. Moreover, the reduction of power consumption can be achieved without concerning process parameters, component parameters, and temperature variations. As a result, the delay margin can be reduced compared to the prior art, which also contribute to the reduction of power consumption.
公开/授权文献
- US5478756A Chemical sensor for detecting binding reactions 公开/授权日:1995-12-26
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