发明授权
US6063673A Transistor device structures, and methods for forming such structures
有权
晶体管器件结构，以及形成这种结构的方法
- 专利标题： Transistor device structures, and methods for forming such structures
- 专利标题（中）： 晶体管器件结构，以及形成这种结构的方法
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申请号： US144512申请日： 1998-08-31
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公开(公告)号： US6063673A公开(公告)日： 2000-05-16
- 发明人: David Y. Kao , Jeff Zhiqiang Wu
- 申请人： David Y. Kao , Jeff Zhiqiang Wu
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/78
摘要：
In one aspect, a method for forming a transistor device on a semiconductor substrate, comprising: a) forming a transistor gate on the substrate; b) forming a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) forming a second polarity internal junction region, the second polarity internal junction region being entirely received within one of the first polarity regions. In another aspect, a transistor device, comprising: a) a transistor gate on a semiconductor substrate; b) a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) a second polarity internal junction region entirely received within one of the first polarity regions. In yet another aspect, the invention includes a resistor, comprising: a) a gate on a semiconductor substrate, the gate being electrically powered with a gate voltage; b) a first polarity source active region and a first polarity drain active region operatively adjacent the electrically powered gate; c) a second polarity internal junction region entirely received within one of the first polarity regions; and d) a current between the first polarity source active region and the first polarity drain active region, the current being substantially linearly dependent on a voltage at the drain region.
公开/授权文献
- US5430754A Solid state laser apparatus 公开/授权日：1995-07-04
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