发明授权
US6064596A Nonvolatile integrated circuit memory devices and methods of operating
same
有权
非易失性集成电路存储器件及其操作方法
- 专利标题： Nonvolatile integrated circuit memory devices and methods of operating same
- 专利标题（中）： 非易失性集成电路存储器件及其操作方法
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申请号： US213722申请日： 1998-12-17
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公开(公告)号： US6064596A公开(公告)日： 2000-05-16
- 发明人: Ki-Hwan Choi , Jong-Min Park
- 申请人： Ki-Hwan Choi , Jong-Min Park
- 申请人地址： KRX
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX97-74209 19971226; KRX98-20001 19980530
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; G11C16/16 ; G11C16/00
摘要：
An electrically erasable and programmable non-volatile semiconductor memory device and method of erasing the same device are provided. A fail bit counter is provided for the device and method. The fail bit counter counts erase fail bits during the sector erase operation. An erase control circuit selectively terminates the sector erase operation depending upon erase fail bit number.
公开/授权文献
- US4897126A Aluminum-lithium alloys having improved corrosion resistance 公开/授权日：1990-01-30
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