发明授权
- 专利标题： Growth of bulk single crystals of aluminum nitride from a melt
- 专利标题（中）： 来自熔体的氮化铝的块体单晶的生长
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申请号： US361944申请日： 1999-07-27
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公开(公告)号： US6066205A公开(公告)日： 2000-05-23
- 发明人: Charles Eric Hunter
- 申请人： Charles Eric Hunter
- 申请人地址： NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： NC Durham
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B15/02 ; C30B35/00
摘要：
Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.
公开/授权文献
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