发明授权
- 专利标题: Buried strap poly etch back (BSPE) process
- 专利标题(中): 埋层多层回蚀(BSPE)工艺
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申请号: US361055申请日: 1999-07-26
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公开(公告)号: US6066527A公开(公告)日: 2000-05-23
- 发明人: Stephan Kudelka , Alexander Michaelis
- 申请人: Stephan Kudelka , Alexander Michaelis
- 申请人地址: CA San Jose
- 专利权人: Infineon Technologies North America Corp.
- 当前专利权人: Infineon Technologies North America Corp.
- 当前专利权人地址: CA San Jose
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01L21/8242 ; H01L27/108
摘要:
In accordance with the present invention, a method for etching back filler material for a buried strap for deep trench capacitors includes the steps of forming a trench in a substrate, filling the trench with a first filler material, recessing the first filler material to a predetermined depth relative to a dielectric collar formed in the trench, forming a divot by etching back the dielectric collar, depositing a liner over the first filler material and portions of the substrate exposed by the formation of the trench, and depositing a second filler material on the liner. A surface of the second filler material is prepared by etching the surface with a wet etchant to provide a hydrogen terminated silicon surface. Wet etching the second filler material is performed to etch back the second filler material selective to the liner and the substrate. The second filler material is etched to form a buried strap.
公开/授权文献
- US5693173A Thermal gas cracking source technology 公开/授权日:1997-12-02