发明授权
US6071337A Apparatus and method for producing crystals by the czochralski method
and crystals produced by this method
有权
通过切克劳斯基法制造晶体的方法和通过该方法制造的晶体的方法
- 专利标题: Apparatus and method for producing crystals by the czochralski method and crystals produced by this method
- 专利标题(中): 通过切克劳斯基法制造晶体的方法和通过该方法制造的晶体的方法
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申请号: US125339申请日: 1998-08-14
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公开(公告)号: US6071337A公开(公告)日: 2000-06-06
- 发明人: Masahiro Sakurada , Yuichi Miyahara , Tomohiko Ohta
- 申请人: Masahiro Sakurada , Yuichi Miyahara , Tomohiko Ohta
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd
- 当前专利权人: Shin-Etsu Handotai Co., Ltd
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-050898 19960214
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B15/14 ; C30B33/02 ; C30B15/20
摘要:
A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.
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