A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.