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26 条记录 (耗时 0.033 秒)

    Heat treatment jig and method of producing the same
    1.
    发明授权
    Heat treatment jig and method of producing the same 失效
    热处理夹具及其制作方法

    公开(公告)号：US6071343A

    公开(公告)日：2000-06-06

    申请号：US743791

    申请日：1996-11-05

    申请人： Takeshi Inaba ,  Shuichi Takeda ,  Shigeo Kato ,  Yasumi Sasaki ,  Yukio Ito ,  Masanori Sato

    发明人： Takeshi Inaba ,  Shuichi Takeda ,  Shigeo Kato ,  Yasumi Sasaki ,  Yukio Ito ,  Masanori Sato

    IPC分类号： C04B41/50 ,  C04B41/87 ,  C23C16/02 ,  C23C16/32 ,  C04B35/36

    CPC分类号： C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/0272 ,  C23C16/325

    摘要： A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

    摘要翻译： 具有用于制造半导体的碳化硅涂层的热处理夹具包括通过CVD法在基材的表面上形成的基材和碳化硅膜。 碳化硅膜由基本上平行于基材的表面的多个层形成，并且至少一个层形成为核形成层，而另外的层被形成为普通的晶体层，使得第二层之间的晶体生长在 在核形成层上的普通晶体层是不连续的，而在普通晶体层中的碳化硅的晶体生长在普通晶体层的厚度方向上是连续的。

    Vehicle drive apparatus
    3.
    发明授权
    Vehicle drive apparatus 失效
    车辆驱动装置

    公开(公告)号：US08282532B2

    公开(公告)日：2012-10-09

    申请号：US12637193

    申请日：2009-12-14

    申请人： Haruki Shirasaka ,  Noriyuki Tani ,  Yuji Iwatsuru ,  Masayoshi Kato ,  Takuji Akiyama ,  Shuichi Takeda ,  Masahiro Ito

    发明人： Haruki Shirasaka ,  Noriyuki Tani ,  Yuji Iwatsuru ,  Masayoshi Kato ,  Takuji Akiyama ,  Shuichi Takeda ,  Masahiro Ito

    IPC分类号： F16H61/00 ,  B60W10/02

    CPC分类号： F16H61/66272 ,  F16H61/0021 ,  F16H2061/0034 ,  F16H2312/14 ,  F16H2312/20 ,  Y10T477/624 ,  Y10T477/69379

    摘要： A vehicle drive apparatus for supplying oil pressure to a hydraulic servo at restart of an engine. The vehicle drive apparatus includes an accumulator that accumulates the oil pressure, an electromagnetic switching valve that retains oil pressure of the accumulator when an oil pump is stopped, a switching valve control unit that controls opening and closing of the electromagnetic switching valve, and a restart determining unit that determines whether or not to restart the vehicle drive source from a stopped state. When it is determined by the restart determining unit to restart the vehicle drive source, the switching valve control unit is started so as to supply the oil pressure accumulated in the accumulator to the hydraulic servo. As a result, engine friction engagement elements are quickly engaged to enable starting of a vehicle.

    摘要翻译： 一种车辆驱动装置，用于在重启发动机时向液压伺服机构供给油压。 车辆驱动装置包括积存油压的蓄能器，当油泵停止时保持蓄能器的油压的电磁切换阀，控制电磁切换阀的打开和关闭的切换阀控制单元以及重启 确定单元，其确定是否从停止状态重新启动车辆驱动源。 当由重启判定单元确定重新开始车辆驱动源时，开关阀控制单元启动，以将累积在蓄能器中的油压供给到液压伺服机构。 结果，发动机摩擦接合元件快速接合以使车辆起动。

    CVD-SiC self-supporting membrane structure and method for manufacturing the same
    4.
    发明授权
    CVD-SiC self-supporting membrane structure and method for manufacturing the same 失效
    CVD-SiC自支撑膜结构及其制造方法

    公开(公告)号：US06515297B2

    公开(公告)日：2003-02-04

    申请号：US09821689

    申请日：2001-03-30

    申请人： Shuichi Takeda ,  Hiroaki Sato

    发明人： Shuichi Takeda ,  Hiroaki Sato

    IPC分类号： H01L2906

    CPC分类号： C30B25/02 ,  C23C16/325 ,  C23C16/4418 ,  C30B29/36 ,  C30B29/60

    摘要： The present invention provides a CVD-SiC self-supporting membrane structure having a plurality of SiC layers laminated by a CVD method, wherein a layer A having a peak intensity (height) ratio r=&bgr;(220)/&bgr;(111) of &bgr; (220) peak to &bgr; (111) peak intensities of the X-ray diffracted beams in a thickness direction being 0.1 or more, and a layer B having a peak intensity ratio r of 0.01 or less are laminated alternately and repeatedly, and the layer A is laid on either side in the thickness direction.

    摘要翻译： 本发明提供一种CVD-SiC自支撑膜结构，其具有通过CVD方法层压的多个SiC层，其中具有β值的峰值强度（高度）比r =β（220）/β（111）的层A X射线衍射光束的厚度方向的峰值（111）峰值强度（220）为0.1以上，峰强度比r为0.01以下的层B交替重复层叠，层 A在厚度方向的任一侧铺设。

    Circuit board providing coplanarity of solders and high soldering reliability for semiconductor component
    6.
    发明申请
    Circuit board providing coplanarity of solders and high soldering reliability for semiconductor component 审中-公开
    电路板提供焊料的共面性和半导体元件的高焊接可靠性

    公开(公告)号：US20070089901A1

    公开(公告)日：2007-04-26

    申请号：US11521625

    申请日：2006-09-14

    申请人： Hiroyuki Yatsu ,  Shuichi Takeda

    发明人： Hiroyuki Yatsu ,  Shuichi Takeda

    IPC分类号： H05K1/16

    CPC分类号： H05K1/111 ,  H01L23/49838 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/10175 ,  H01L2224/16 ,  H01L2924/00014 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/09781 ,  H05K2201/0989 ,  H05K2201/10674 ,  Y02P70/611 ,  H01L2224/05599

    摘要： A circuit board according to the present invention is so formed that an extension pattern not covered with an insulating film is provided at a NC land that does not allow an electric signal to pass therethrough, so as to have a configuration equivalent to that of a pattern not covered with the sulating film and provided at a land that allows the electric signal to pass therethrough. Accordingly, the NC land may have an exposed surface area equivalent to that of the land. Therefore, when a semiconductor component is soldered using solders, bumps of the solders at the NC land and at the land may be evenly formed, thereby providing coplanarity of the solders, and increasing soldering reliability for the semiconductor component.

    摘要翻译： 根据本发明的电路板是这样形成的，即在NC面上设置未被绝缘膜覆盖的延伸图案，其不允许电信号通过，以具有与图案相同的构造 没有被隔膜覆盖并设置在允许电信号通过的地面。 因此，NC地面可能具有与土地面相当的暴露表面积。 因此，当使用焊料焊接半导体部件时，可以均匀地形成NC区域和焊盘处的焊料的凸块，从而提供焊料的共面性，并且增加半导体部件的焊接可靠性。

    Method of producing sintered ceramic material
    7.
    发明授权
    Method of producing sintered ceramic material 失效
    生产烧结陶瓷材料的方法

    公开(公告)号：US5139720A

    公开(公告)日：1992-08-18

    申请号：US655413

    申请日：1991-02-12

    申请人： Shuichi Takeda ,  Hideki Shishiba

    发明人： Shuichi Takeda ,  Hideki Shishiba

    IPC分类号： C04B35/645 ,  C04B35/65

    CPC分类号： C04B35/645 ,  C04B35/6455 ,  C04B35/651

    摘要： In a method of manufacturing a sintered ceramic material using the heat generated in a thermit reaction as a heating source, a pre-heating is applied preceding to the sintering step or a mixture comprising: (A) at least one ceramic powder, (B) at least one non-metallic powder selected from the group consisting of carbon, boron and silicon, and (C) a metal powder and/or a non-metallic powder other than the above-mentioned (B) is used. Homogeneous and dense sintered ceramic material or sintered composite ceramic material can be obtained by this method, and the fine texture thereof, and the phase constitution, the phase distribution and the like of the composite ceramic phase can be controlled sufficiently.

    Sintering method
    8.
    发明授权
    Sintering method 失效
    烧结法

    公开(公告)号：US4761262A

    公开(公告)日：1988-08-02

    申请号：US928220

    申请日：1986-10-08

    申请人： Masaru Ogata ,  Shuichi Takeda

    发明人： Masaru Ogata ,  Shuichi Takeda

    IPC分类号： C04B35/64 ,  B01J3/06 ,  B22F3/08 ,  B22F3/14 ,  C04B35/645 ,  C04B35/65 ,  F27B17/00 ,  B22F1/00

    CPC分类号： B01J3/062 ,  B22F3/08 ,  B22F3/14 ,  C04B35/645 ,  C04B35/651 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0685

    摘要： A method for sintering a metal powder, a ceramic powder, or a mixture thereof accomplishes compact sintering of even a high melting substance by heating the powder at an elevated temperature for a short time under not less than 10,000 atmospheres of pressure. To attain the quick high-temperature heating under the ultrahigh pressure, a Thermit reaction is generated in an ultrahigh pressure generating apparatus which is provided with a gasket made of pyrophyllite and cylinders and anvils protected with heat insulators.For the purpose of preventing the Thermit reaction from inducing a reaction between the Thermit composition and the powder under treatment and the heater and ensuring electrical insulation of these components, barriers made of hexagonal boron nitride and/or tantalum are suitably disposed within the apparatus.

    摘要翻译： PCT号PCT / JP86 / 00069秒。 371日期1986年10月8日第 102（e）中的日期1986年10月8日提交的PCT 1986年2月14日的PCT公布。 号WO86 / 04890的PCT公布。 日期8月28日，对于烧结金属粉末，陶瓷粉末，或它们的混合物1986.A方法通过短时间下不小于10,000大气压粉末在升高的温度下加热来完成，即使高熔点物质的紧凑烧结 的压力。 为了实现超高压力下快速高温加热，在其中设置有由叶蜡石和汽缸和砧与热绝缘体保护的垫圈超高压产生装置中产生铝热反应。 为了防止铝热反应从诱导铝热组合物和接受治疗的粉末和加热器之间的反应，并确保这些部件的电绝缘的目的，由六方氮化硼和/或钽的屏障适当地设置在该装置内。