发明授权
US6074940A Method of making a fuse in a semiconductor device and a semiconductor
device having a fuse
失效
在半导体器件中制造熔丝的方法和具有熔丝的半导体器件
- 专利标题： Method of making a fuse in a semiconductor device and a semiconductor device having a fuse
- 专利标题（中）： 在半导体器件中制造熔丝的方法和具有熔丝的半导体器件
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申请号： US122501申请日： 1998-07-24
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公开(公告)号： US6074940A公开(公告)日： 2000-06-13
- 发明人: Dong-Hun Lee , Jong-Hyon Ahn
- 申请人： Dong-Hun Lee , Jong-Hyon Ahn
- 申请人地址： KRX
- 专利权人： Samsung Eletronics Co., Ltd.
- 当前专利权人： Samsung Eletronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX97-35235 19970726
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L23/525 ; H01L21/44
摘要：
The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer.
公开/授权文献
- US5407716A Masking methods using flexible strip 公开/授权日：1995-04-18
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