发明授权
- 专利标题: Turn-off circuit for an LDMOS in presence of a reverse current
- 专利标题(中): 在存在反向电流的情况下,LDMOS的关断电路
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申请号: US95735申请日: 1998-06-11
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公开(公告)号: US6075391A公开(公告)日: 2000-06-13
- 发明人: Mario Tarantola , Giuseppe Cantone , Angelo Genova , Roberto Gariboldi
- 申请人: Mario Tarantola , Giuseppe Cantone , Angelo Genova , Roberto Gariboldi
- 申请人地址: ITX Agrate Brianza
- 专利权人: STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics S.r.l.
- 当前专利权人地址: ITX Agrate Brianza
- 优先权: EPX97830298 19970624
- 主分类号: H03K17/06
- IPC分类号: H03K17/06 ; H03K17/08 ; H03K17/687
摘要:
A circuit for charging a capacitance using an LDMOS integrated transistor functioning as a source follower and controlled, in a manner to emulate a high voltage charging diode of the capacitance. The LDMOS transistor is controlled via a bootstrap capacitor charged by a diode at the supply voltage of the circuit, and by an inverter driven by a logic control circuit as a function of a Low Gate Drive Signal and of a second logic signal which is active during a phase wherein the supply voltage is lower than the minimum switch-on voltage of the integrated circuit. The circuit uses a first zener diode to charge the bootstrap capacitor and the source of the transistor is connected to the supply node through a second zener diode.
公开/授权文献
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