发明授权
- 专利标题: Single step process for blanket-selective CVD aluminum deposition
- 专利标题(中): 毯式选择性CVD铝沉积的单步法
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申请号: US620405申请日: 1996-03-22
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公开(公告)号: US6077781A公开(公告)日: 2000-06-20
- 发明人: Ted Guo , Liang-Yuh Chen , Mehul Naik , Roderick C. Mosely
- 申请人: Ted Guo , Liang-Yuh Chen , Mehul Naik , Roderick C. Mosely
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; C23C14/56 ; C23C16/54 ; H01L21/28 ; H01L21/3205 ; H01L21/677 ; H01L21/768 ; H01L23/522 ; H01L21/44
摘要:
The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invention, a dielectric layer is formed over a conducting member. A thin nucleation layer is then deposited onto the dielectric layer prior to etching high aspect ratio apertures through the nucleation and dielectric layers to expose the underlying conducting member on the aperture floor. A CVD metal layer is then deposited onto the structure to achieve selective deposition within the apertures, while preferably also forming a blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.