发明授权
US6080527A Optical proximity correction of L and T shaped patterns on negative
photoresist
有权
负光致抗蚀剂上L和T形图案的光学邻近校正
- 专利标题： Optical proximity correction of L and T shaped patterns on negative photoresist
- 专利标题（中）： 负光致抗蚀剂上L和T形图案的光学邻近校正
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申请号： US442861申请日： 1999-11-18
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公开(公告)号： US6080527A公开(公告)日： 2000-06-27
- 发明人: I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
- 申请人： I-Hsiung Huang , Anseime Chen , Jiunn-Ren Huang
- 申请人地址： TWX Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsinchu
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F9/00
摘要：
An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.
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