Method of planarizing a surface on a semiconductor wafer

Invention Grant

US6083838A Method of planarizing a surface on a semiconductor wafer 失效

Title translation: 平面化半导体晶片上的表面的方法

Please log in to see more content

Patent Title: Method of planarizing a surface on a semiconductor wafer
Patent Title (中): 平面化半导体晶片上的表面的方法
Application No.: US82162

Application Date: 1998-05-20
Publication No.: US6083838A

Publication Date: 2000-07-04
Inventor: Randolph H. Burton , Yaw S. Obeng , Laurence D. Schultz
Applicant: Randolph H. Burton , Yaw S. Obeng , Laurence D. Schultz
Applicant Address: NJ Murray Hill
Assignee: Lucent Technologies Inc.
Current Assignee: Lucent Technologies Inc.
Current Assignee Address: NJ Murray Hill
Main IPC: H01L21/321
IPC: H01L21/321 ; H01L21/304

Abstract:

The present invention provides a method of planarizing a surface on a semiconductor wafer containing metal. In one embodiment, the method comprises selecting a slurry that contains conventional components of an abrasive and an oxidant. The oxidant is known to have a known rate of oxidation and is capable of oxidizing the metal. This embodiment further comprises reducing a rate of exposure of the metal to the oxidant by altering a property of the slurry, oxidizing the metal at the reduced rate to form an oxide of the metal, and removing the oxide with the abrasive to produce a planarized surface of the semiconductor wafer.

Abstract(Chinese):

本发明提供了一种平面化包含金属的半导体晶片上的表面的方法。在一个实施方案中，该方法包括选择含有磨料和氧化剂的常规组分的浆料。已知氧化剂具有已知的氧化速率并能够氧化金属。该实施方案还包括通过改变浆料的性质来降低金属暴露于氧化剂的速率，以降低的速率氧化金属以形成金属的氧化物，并用磨料除去氧化物以产生平坦化的表面的半导体晶片。

Public/Granted literature

US5310790A Process for producing polyvinyl ester having a high degree of polymerization and process for producing polyvinyl alcohol having a high degree of polymerization Public/Granted day:1994-05-10

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理