发明授权
US6087076A Method of manufacturing semiconductor devices by performing coating,
heating, exposing and developing in a low-oxygen or oxygen free
controlled environment
失效
通过在低氧或无氧的受控环境中进行涂覆,加热,曝光和显影来制造半导体器件的方法
- 专利标题: Method of manufacturing semiconductor devices by performing coating, heating, exposing and developing in a low-oxygen or oxygen free controlled environment
- 专利标题(中): 通过在低氧或无氧的受控环境中进行涂覆,加热,曝光和显影来制造半导体器件的方法
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申请号: US968589申请日: 1997-11-13
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公开(公告)号: US6087076A公开(公告)日: 2000-07-11
- 发明人: Keita Sakai , Keiko Chiba , Hiroshi Maehara
- 申请人: Keita Sakai , Keiko Chiba , Hiroshi Maehara
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-069612 19950328
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/30 ; G03F7/38 ; H01L21/027 ; G03C5/00
摘要:
A method of manufacturing semiconductor devices includes a coating step for coating a substrate using a resist solution including a base resin and a low-oxygen or oxygen-free solvent in which oxygen is removed by nitrogen bubbling, a heating step for heating the substrate coated with the resist, an exposing step for exposing the substrate with radiation to transfer a pattern, and a developing step for developing the exposed substrate. The coating step, the heating step, the exposing step and the developing step are performed under an environment controlled in a low-oxygen or oxygen-free state.
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